Suspended MoTe<sub>2</sub> field effect transistors with ionic liquid gate
نویسندگان
چکیده
The electrical performance of suspended few-layer MoTe2 field-effect-transistors with ionic liquid gating has been investigated. structure not only enhances the mobility by removing influence substrate but also allows ions to accumulate on both top and bottom surface MoTe2. consequent increase in gate capacitance resulted an improved subthreshold swing (?73 mV/dec) on–off ratio (106) at room temperature for compared substrate-supported devices. Suspended transistors enable a larger charge density gated supported devices may provide useful platform study screening physics 2D materials.
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2021
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0065568